4,545 research outputs found
Temperature gradient and Fourier's law in gradient-mass harmonic systems
Heat flow and thermal profile in a 1D harmonic lattice with
coordinate-dependent masses has been calculated in the thermodynamic limit. It
is shown in the particular example of a 1D harmonic lattice with linearly
increasing masses that in standard Langevin conditions of contact, a
temperature gradient can form, and Fourier's law can be obeyed.Comment: http://link.aps.org/doi/10.1103/PhysRevE.87.05210
Dielectric Constant and Charging Energy in Array of Touching Nanocrystals
We calculate the effective macroscopic dielectric constant of
a periodic array of spherical nanocrystals (NCs) with dielectric constant
immersed in the medium with dielectric constant . For an array of NCs with the diameter and the distance
between their centers, which are separated by the small distance or touch each other by small facets with radius what is
equivalent to , we derive two analytical asymptotics of the
function in the limit .
Using the scaling hypothesis we interpolate between them near to obtain
new approximated function for . It agrees with existing numerical calculations for
, while the standard mean-field Maxwell-Garnett
and Bruggeman approximations fail to describe percolation-like behavior of
near . We also show that in this case the charging
energy of a single NC in an array of touching NCs has a non-trivial
relationship to , namely ,
where varies from 1.59 to 1.95 depending on the studied
three-dimensional lattices. Our approximation for can be
used instead of mean field Maxwell-Garnett and Bruggeman approximations to
describe percolation like transitions near for other material
characteristics of NC arrays, such as conductivity
Accumulation, inversion, and depletion layers in SrTiO
We study potential and electron density depth profiles in accumulation,
inversion and depletion layers in crystals with large and nonlinear dielectric
response such as . We describe the lattice dielectric
response using the Landau-Ginzburg free energy expansion. In accumulation and
inversion layers we arrive at new nonlinear dependencies of the width of
the electron gas on applied electric field . Particularly important is the
predicted electron density profile of accumulation layers (including the
interface) , where . We compare this profile with available data and find
satifactory agreement. For a depletion layer we find an unconventional
nonlinear dependence of capacitance on voltage. We also evaluate the role of
spatial dispersion in the dielectric response by adding a gradient term to the
Landau-Ginzburg free energy
Surface roughness scattering in multisubband accumulation layers
Accumulation layers with very large concentrations of electrons where many
subbands are filled became recently available due to ionic liquid and other new
methods of gating. The low temperature mobility in such layers is limited by
the surface roughness scattering. However theories of roughness scattering so
far dealt only with the small-density single subband two-dimensional electron
gas (2DEG). Here we develop a theory of roughness-scattering limited mobility
for the multisubband large concentration case. We show that with growing 2D
electron concentration the surface dimensionless conductivity
first decreases as and then saturates as
, where and are the characteristic
length and height of the surface roughness, is the effective Bohr radius.
This means that in spite of the shrinkage of the 2DEG width and the related
increase of the scattering rate, the 2DEG remains a good metal. Thus, there is
no re-entrant metal-insulator transition at high concentrations conjectured by
Das Sarma and Hwang [PRB 89, 121413 (2014)].Comment: A few corrections to the version published in PRB are included here
in this versio
Collapse of electrons to a donor cluster in SrTiO
It is known that a nucleus with charge where creates
electron-positron pairs from the vacuum. These electrons collapse onto the
nucleus resulting in a net charge while the positrons are emitted. This
effect is due to the relativistic dispersion law. The same reason leads to the
collapse of electrons to the charged impurity with a large charge number in
narrow-band gap semiconductors and Weyl semimetals as well as graphene. In this
paper, a similar effect of electron collapse and charge renormalization is
found for donor clusters in SrTiO (STO), but with a very different origin.
At low temperatures, STO has an enormously large dielectric constant. Because
of this, the nonlinear dielectric response becomes dominant when the electric
field is not too small. We show that this leads to the collapse of surrounding
electrons into a charged spherical donor cluster with radius when its total
charge number exceeds a critical value where is the
lattice constant. Using the Thomas-Fermi approach, we find that the net charge
grows with until exceeds another value .
After this point, remains . We extend our results to the case
of long cylindrical clusters. Our predictions can be tested by creating discs
and stripes of charge on the STO surface
Electron gas induced in SrTiO
This mini-review is dedicated to the 85th birthday of Prof. L. V. Keldysh,
from whom we have learned so much. In this paper we study the potential and
electron density depth profiles in surface accumulation layers in crystals with
a large and nonlinear dielectric response such as SrTiO (STO) in the cases
of planar, spherical and cylindrical geometries. The electron gas can be
created by applying an induction to the STO surface. We describe the
lattice dielectric response of STO using the Landau-Ginzburg free energy
expansion and employ the Thomas-Fermi (TF) approximation for the electron gas.
For the planar geometry we arrive at the electron density profile , where . We extend our results to
overlapping electron gases in GTO/STO/GTO multi-heterojunctions and electron
gases created by spill-out from NSTO (heavily -type doped STO) layers into
STO. Generalization of our approach to a spherical donor cluster creating a big
TF atom with electrons in STO brings us to the problem of supercharged nuclei.
It is known that for an atom with nuclear charge , where ,
electrons collapse onto the nucleus resulting in a net charge . Here,
instead of relativistic physics, the collapse is caused by the nonlinear
dielectric response. Electrons collapse into the charged spherical donor
cluster with radius when its total charge number exceeds the critical
value , where is the lattice constant. The net charge
grows with until exceeds . After this
point, the charge number of the compact core remains , with
the rest electrons forming a sparse Thomas-Fermi electron atmosphere
around it. We extend our results to the case of long cylindrical clusters as
well.Comment: mini-review dedicated to the 85th birthday of Prof. L. V. Keldys
Anomalous conductivity, Hall factor, magnetoresistance, and thermopower of accumulation layer in
We study the low temperature conductivity of the electron accumulation layer
induced by the very strong electric field at the surface of
sample. Due to the strongly nonlinear lattice dielectric response, the
three-dimensional density of electrons in such a layer decays with the
distance from the surface very slowly as . We show
that when the mobility is limited by the surface scattering the contribution of
such a tail to the conductivity diverges at large because of growing time
electrons need to reach the surface. We explore truncation of this divergence
by the finite sample width, by the bulk scattering rate, or by the crossover to
the bulk linear dielectric response with the dielectric constant . As a
result we arrive at the anomalously large mobility, which depends not only on
the rate of the surface scattering, but also on the physics of truncation.
Similar anomalous behavior is found for the Hall factor, the magnetoresistance,
and the thermopower
Theory of a field effect transistor based on semiconductor nanocrystal array
We study the surface conductivity of a field-effect transistor (FET) made of
periodic array of spherical semiconductor nanocrystals (NCs). We show that
electrons introduced to NCs by the gate voltage occupy one or two layers of the
array. Computer simulations and analytical theory are used to study the array
screening and corresponding evolution of electron concentrations of the first
and second layers with growing gate voltage. When first layer NCs have two
electrons per NC the quantization energy gap between its 1S and 1P levels
induces occupation of 1S levels of second layer NCs. Only at a larger gate
voltage electrons start leaving 1S levels of second layer NCs and filling 1P
levels of first layer NCs. By substantially larger gate voltage, all the
electrons vacate the second layer and move to 1P levels of first layer NCs. As
a result of this nontrivial evolution of the two layers concentrations, the
surface conductivity of FET non-monotonically depends on the gate voltage. The
same evolution of electron concentrations leads to non-monotonous behaviour of
the differential capacitance
Hopping conductivity and insulator-metal transition in films of touching semiconductor nanocrystals
This paper is focused on the the variable-range hopping of electrons in
semiconductor nanocrystal (NC) films below the critical doping concentration
at which it becomes metallic. The hopping conductivity is described by
the Efros-Shklovskii law which depends on the localization length of electrons.
We study how the localization length grows with the doping concentration in
the film of touching NCs. For that we calculate the electron transfer matrix
element between neighboring NCs for two models when NCs touch by small
facets or just one point. We study two sources of disorder: variations of NC
diameters and random Coulomb potentials originating from random numbers of
donors in NCs. We use the ratio of to the disorder-induced NC level
dispersion to find the localization length of electrons due to the multi-step
elastic co-tunneling process. We found three different phases at
depending on the strength of disorder, the material, sizes of NCs and their
facets: 1) "insulator" where the localization length of electrons increases
monotonically with and 2) "oscillating insulator" when the localization
length (and the conductivity) oscillates with from the insulator base and
3) "blinking metal" where the localization length periodically diverges. The
first two phases were seen experimentally and we discuss how one can see the
more exotic third one. In all three the localization length diverges at
. This allows us to find
Photoluminescence in array of doped semiconductor nanocrystals
We study the dependence of the quantum yield of photoluminescence of a dense,
periodic array of semiconductor nanocrystals (NCs) on the level of doping and
NC size. Electrons introduced to NCs via doping quench photoluminescence by the
Auger process, so that practically only NCs without electrons contribute to the
photoluminescence. Computer simulation and analytical theory are used to find a
fraction of such empty NCs as a function of the average number of donors per NC
and NC size. For an array of small spherical NCs, the quantization gap between
1S and 1P levels leads to transfer of electrons from NCs with large number of
donors to those without donors. As a result, empty NCs become extinct, and
photoluminescence is quenched abruptly at an average number of donors per NC
close to 1.8. The relative intensity of photoluminescence is shown to correlate
with the type of hopping conductivity of an array of NCs
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